As a result, applying and improving the properties of perovskite oxides in flexible memories, flexible sensors, and flexible energy management (generation and storage) devices have become an emerging research hot-topic [ 26 ]. In this review, we focus on the flexible electronics based on perovskite oxide films.
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DOI: 10.1016/j.jmst.2020.10.053 Corpus ID: 229427932 Fatigue-less relaxor ferroelectric thin films with high energy storage density via defect engineer @article{Song2021FatiguelessRF, title={Fatigue-less relaxor ferroelectric thin films with high energy storage density via defect engineer}, author={Baijie Song and Shuanghao …
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The first RFE based energy storage capacitor was a Pb based ceramic powder (Pb(Mg 1/3 Nb 2/3)O 3-PbTiO 3)-copolymer (poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) composites film developed by Bai et al., in 2000 at Pennsylvania State University .
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For example, polar nanoregions (PNR) in SrTiO 3 thin films with a less than 3 unit cells (3-u.c.) thickness can be easily polarized. (17) The research of Kolpak and Wang showed that the special surface of 2D ferroelectric materials can effectively compensate the depolarization field.
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In this study, the energy storage properties of relaxor Pb0.92La0.08(Zr0.52Ti0.48)O3 (PLZT) thin films grown on Pt/Si substrates using pulsed laser deposition (PLD) and sol-gel methods were ...
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The demonstrated synergistic optimization strategy has potential applicability to flexible ferroelectric thin film systems. Moreover, the energy storage properties of flexible …
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However, due to materials limitations and their preparation requirements, there are significant challenges which limit the use of current dielectrics in high-energy storage capacitors. In addition material limitations such as, low dielectric permittivity, low breakdown strength, and high hysteresis loss decrease these materials'' energy density …
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Lead-free 0.5BaZr 0.2 Ti 0.8 O 3 –0.5Ba 0.7 Ca 0.3 TiO 3 (BZT–BCT) thin films were deposited on Pt(1 1 1)/TiO 2 /SiO 2 /Si substrates by pulsed laser deposition. The optimal ferroelectric response with a high saturation polarization P s ~ 110 µC cm −2, remnant polarization P r ~ 32.5 µC cm −2 along with a coercive field of 0.18 MV cm −1 …
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An improved high energy storage density of 55 J/cm 3 and an optimized high energy storage efficiency of 80.9% are achieved in the Mn-doped SBT-BT relaxor …
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Abstract The year of 2021 is the 100th anniversary of the first publication of ferroelectric behaviour in Rochelle salt, focussing on its piezoelectric properties. Over the past many decades, people witnessed a great impact of ferroelectricity on our everyday life, where numerous ferroelectric materials have been designed and developed to enable …
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a, Dielectric–ferroelectric–antiferroelectric (DE–FE–AFE) ferroic phase space in fluorite-structure HZO binary oxide thin films.b–d, Capacitance (b), reversible stored charge (c) and ...
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Consequently, our designed high-entropy ceramics simultaneously realize an ultrahigh Wrec of 11.0 J·cm −3 and a high η of 81.9% under a high electric field of ~ 753 kV·cm −1, in addition to ...
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In this work, a detailed experimental investigation of energy storage properties is presented for 10 nm thick silicon-doped hafnium oxide anti-ferroelectric thin films. Owing to high field induced ...
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Herein, we report eco-friendly BiFeO 3-modified Bi 3.15 Nd 0.85 Ti 2.8 Zr 0.2 O 12 (BNTZ) free-lead ferroelectric thin films for high-temperature capacitor applications that …
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By introducing super tetragonal nanostructures into glassy ferro-. electric with MPB composition, a giant energy storage density of. ≈ 86 J cm−3with a high energy efficiency of ≈81% was ...
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In this Review, we focus on thin-film ferroelectric materials and, in particular, on the possibility of controlling their properties through the application of strain engineering in...
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Moreover, the energy storage properties of flexible ferroelectric thin films can be further fine-tuned by adjusting bending angles and defect dipole concentrations, offering a versatile platform for control and performance optimization.
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DOI: 10.1002/adts.202100324 Corpus ID: 247512901 Strain Engineering of Energy Storage Performance in Relaxor Ferroelectric Thin Film Capacitors @article{Xu2022StrainEO, title={Strain Engineering of Energy Storage Performance in Relaxor Ferroelectric Thin Film Capacitors}, author={Shiqi Xu and Xiaoming Shi and …
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Optimal energy-storage properties were obtained for 0.96BNT-0.04BT-Fe2 thin films, with a breakdown strength, energy-storage density and efficiency of 2500 kV/cm, 33 J/cm³, 67.8%, respectively.
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The ceramic 5% Y-doped HfO 2 target was synthesized at 1,400 °C by a solid-state reaction using HfO 2 (99.99% purity) and Y 2 O 3 (99.9% purity) powders. The growth temperature from 750 to 970 ...
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Composition control and various types of strain can effectively regulate the performance of ferroelectric films, including ferroelectric hysteresis loop, Curie temperature, leakage current, etc., to meet the application requirements of ferroelectric devices in various fields.
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The conversion from mechanical and vibrational energy from natural sources like wind, waves or human motions into electrical energy have been of a great interest in scientific community. 2–6 One way to harness electrical energy from sources of mechanical vibrations is to utilize the piezoelectric properties of ferroelectric materials.
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0. Understanding the dynamic behavior of domain structures is critical to the design and application of super-elastic freestanding ferroelectric thin films. Phase-field simulations represent a powerful tool for observing, exploring and revealing the domain-switching behavior and phase transitions in ferroelectric materials at the mesoscopic scale.
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Amorphous-nanocrystalline lead titanate thin films for dielectric energy storage. Elizabeth K. Michael S. Trolier-McKinstry. Materials Science, Engineering. 2014. Many high permittivity crystalline dielectric thin films have a low breakdown strength, which is unfavorable for dielectric energy storage devices.
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Conventional thin-film strain effects By the early 2000s, there were already numerous obser - vations of intriguing phenomena in ferroelectric films originating from lattice-mismatch-based strain5,6. The study …
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Here superior capacitive properties and outstanding stability are reported over 10 7 charge/discharge cycles and a wide temperature range of −60 to 200 C of ferroelectric Aurivillius phase Bi 3.25 La 0.75 Ti 3 O 12-BiFeO 3 (BLT-BFO), which represents one of the
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The Au-PZO thin films containing 1 mol % Au demonstrated an energy storage density of 10.8 J/cm 3. Huang et al. controlled the annealing temperature of the anti-ferroelectric PbHfO 3 films. [ 12 ] Finally, the PbHfO 3 films annealed at 650℃ obtained a high W rec of 24.9 J/cm 3 .
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Dielectric capacitors have become a key enabling technology for electronics and electrical systems. Although great strides have been made in the development of ferroelectric ceramic and thin films for capacitors, much less attention has been given to preventing polarization fatigue, while improving the energy density, of …
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Furthermore, the strong coupling relationship between strain and ferroelectric polarization in super-elastic ferroelectric nanostructures is confirmed and …
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